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Your cart is empty. Advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Drain-Source Voltage:55V
Drain Current-Continuous:110A
Drain Current-Single Pluse:390A
Total Dissipation @TC=25°C:200W
Operating Junction Temperature: -55~175℃
Package Including:
5pcs* IRFP064NPBF
