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100pcs 2N7000 2N 7000 N-Channel Enhancement Mode Field Effect Transistor,60V 20mA,TO-92.

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$7.79

$ 3 .99 $3.99

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  • Low CISS and fast switching speeds
  • Free from secondary breakdown
  • High input impedance and high gain.
  • Complementary N- and P-Channel devices
  • NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability. We do not provide technical support, please familiarize yourself with the parameters and performance of the purchased products in advance. Sincerely apologize for you.


The 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure.This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary break down.
Drain Source Voltage：60V
Drain Current：200mA
Operating and Storage Temperature Range: – 55 to +150℃
Package include:
100pcs*2N7000